The SILTECTRA™ proprietary process is a high-output, low-cost wafering and thinning technology for substrates like SiC and gallium arsenide, as well as gallium nitride, sapphire and silicon. The laser-based technique employs a chemical-physical process that uses thermal stress to generate a force that splits the material with exquisite precision along the desired plane, and produces virtually no kerf loss. This delivers breakthrough advantages. First, it extracts more wafers per boule than conventional wafering technologies. This drives up output. Second, it dramatically reduces consumables costs.

Since November 2018, SILTECTRA has been part of Infineon Technologies AG, which uses cold split technology to split silicon carbide (SiC) wafers, enabling the number of chips from one wafer to be doubled. For the semiconductor material Silicon Carbide (SiC) rapidly rising demand is expected in the coming years. SiC products, such as Infineon CoolSiC™ devices are already used today in very efficient and compact solar inverters. In the future, SiC will play a more and more important role in electro-mobility.